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T J max ? 60 ? C ? ?
? ( 5 . 0 A ) 2 ? 27 m ? ? ? 93 . 75 ? C
Typical application Example 2:
Requirement:
+48V High Side Redundant
Bus Voltage = +48V (+36V to +60V, 100V for 100ms
transient)
Load Current = 5A load (assume through each
redundant path)
Maximum Ambient Temperature = 60°C
Solution:
A single PI2007 with a suitable MOSFET for each
redundant +48V power source should be used and
configured as shown in Figure 17 or Figure 18. Figure
17 is configured with the VC biased from the return
line through a bias resistor. Figure 18 is configured
with the VC biased from the return line through the
constant current circuit.
Select a suitable N-Channel MOSFET: Select the
N-Channel MOSFET with voltage rating higher than
the input voltage, Vin, plus any expected transient
voltages, with a low R DS(on) that is capable of
supporting the full load current with margin. For
?
R DS ( on ) ? 18 m ? ? 1 . 50 ? 27 m ? maximum at 95°C
Maximum Junction temperature after 10s
? 50 ? C ?
? W ?
For continuous operation refer the MOSFET
datasheet for R θJA under continuous operation and
plug it in place of 50°C/W.
VC Bias: Since the bus voltage is higher than 14V,
connect VC pin to the high side of the input voltage
and connect a bias resistor (R PG ) or a constant current
circuit between PI2007 SGND pin and ground (Vin
return), as shown in Figure 17 and Figure 18. Place a
low forward voltage drop Schottky diode and a 1μF
ceramic capacitor between SGND pin and VC pin.
Also connect PGND pin to SGND at the coupling
capacitor terminal.
Recommended Schottky: PMEG3005AEA from NXP
or equivalent
V VC ? min ? V VC ? CLMMax
I VC _ Max ? 0 . 1 mA
instance, a 100V rated MOSFET with 10A current
capability is suitable. An exemplary MOSFET having
these characteristic is IRF7853PbF from International
Rectifier.
R PG selection:
R PG ?
?
36 V ? 12 . 5 V
2 . 0 mA ? 0 . 1 mA
? 11 . 19 k ?
R θJA = 50°C/W on 1in copper, t ≤ 10seconds
? 60 V ? 11 V ? 2 ? 218 mW
PdR PG ?
( V VC ? max ? V VC ? CLMMin ) 2
From the IRF7853PbF datasheet:
N-Channel MOSFET
V DS = 100V
I D = 8.3A maximum continuous drain current at
25°C
I D-PULSE = 66A pulsed drain current
V GS ( MAX ) = ? ? 20V
2
R θJA for continuous operation not provided
R DS(on) =14.4mΩ typical at V GS =10V, T J =25°C
R DS(on) =18mΩ maximum at V GS =10V, T J =25°C
Select R PG =11kΩ 1%
R PG maximum power dissipation:
?
Use ? W Resistor in 1206 package
R PG 11 k ?
Is . reverse ?
Vth . reverse ? 6 mV
Reverse current threshold is:
?
R DS ( on ) 18 m ?
? ? 333 mA
Power dissipation:
Rds(on) is 18mΩ maxim um at 25°C & 10Vgs and will
increase as the temperature increases. Add 20°C to
maximum ambient temperature to compensate for the
temperature rise due to power dissipation. At 80°C
(60°C + 20°C) Rds(on) will increase by 40%.
R DS ( on ) ? 18 m ? ? 1 . 40 ? 25 . 2 m ? maximum at 80°C
Maximum Junction temperature
T J max ? 60 ? C ? ?
? ( 5 . 0 A ) 2 ? 25 . 2 m ? ? ? 91 . 5 ? C
? 50 ? C
? W
?
?
Recalculate maximum R DS(on) at 95°C.
At 95°C Rds(on) will increase by 50%:
Figure 17: PI2007 in high side +48V application, VC
is biased through a bias resistor
Picor Corporation ? picorpower.com
PI2007
Rev 1.3
Page 14 of 19
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